发明名称 Silicon Microphone with Integrated Back Side Cavity
摘要 An integrated circuit containing a capacitive microphone with a back side cavity located within the substrate of the integrated circuit. Access holes may be formed through a dielectric support layer at the surface of the substrate to provide access for etchants to the substrate to form the back side cavity. The back side cavity may be etched after a fixed plate and permeable membrane of the capacitive microphone are formed by providing etchants through the permeable membrane and through the access holes to the substrate.
申请公布号 US2011156179(A1) 申请公布日期 2011.06.30
申请号 US20100969859 申请日期 2010.12.16
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SHIH WEI-YAN
分类号 H01L29/84;H01L21/04 主分类号 H01L29/84
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