发明名称 |
CMOS COMPATIBLE PRESSURE SENSOR FOR LOW PRESSURES |
摘要 |
Pressure sensors having a topside boss and a cavity formed using deep reactive-ion etching (DRIE) or plasma etching. Since the boss is formed on the topside, the boss is aligned to other features on the topside of the pressure sensor, such as a Wheatstone bridge or other circuit elements. Also, since the boss is formed as part of the diaphragm, the boss has a reduced mass and is less susceptible to the effects of gravity and acceleration. These pressure sensors may also have a cavity formed using a DRIE or plasma etch. Use of these etches result in a cavity having edges that are substantially orthogonal to the diaphragm, such that pressure sensor die area is reduced. The use of these etches also permits the use of p-doped wafers, which are compatible with conventional CMOS technologies. |
申请公布号 |
WO2011079078(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
WO2010US61350 |
申请日期 |
2010.12.20 |
申请人 |
SILICON MICROSTRUCTURES, INC.;DOERING, HOLGER;CHOLEWA, RAINER |
发明人 |
DOERING, HOLGER;CHOLEWA, RAINER |
分类号 |
G01P15/12 |
主分类号 |
G01P15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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