| 摘要 |
PURPOSE: The power-up signal generating circuit of a semiconductor integrated circuit is provided to normally generate a power-up signal by accurately detecting the level of an internal power voltage regardless of temperature. CONSTITUTION: A main driving part(410) drives a power-up detecting node(N_DET) according to the level information of a power voltage. An auxiliary driving part(420) additionally drives the power-up detecting node according to temperature information(T_INFO). An outputting part(430) outputs a power-up signal(PUPBP) by responding to the change of potential in the power-up detecting node. A discharge driving part discharges the power-up detecting node by responding to the level of an external power voltage. A charge driving part charges the power-up detecting node by responding the level of an internal power voltage.
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