| 摘要 |
PROBLEM TO BE SOLVED: To achieve a fin type semiconductor device of N-type having a desired characteristics by introducing an N-type impurity into a side surface of a fin type semiconductor region to form an impurity region with low resistance. SOLUTION: After forming a fin type semiconductor region 13 on a substrate 11, an N-type impurity is introduced at least in a side of the fin type semiconductor region 13 by plasma doping to form an N-type impurity region 27b in the side of the fin type semiconductor region 13. The feed rate per unit time and unit volume of gas containing the N-type impurity is set to 5.1×10<SP>-8</SP>/((1.7<SP>2.51</SP>/2<SP>4.51</SP>)×(Y/500))[mol/(min×L×s)] or more, and the feed rate per unit time and unit volume of dilution gas is set to 1.7×10<SP>-4</SP>/((20<SP>2.51</SP>/2<SP>4.51</SP>)×(Y/500))[mol/(min×L×s)] or more, wherein Y [W] represents a source power in the plasma doping. COPYRIGHT: (C)2011,JPO&INPIT |
