Procédé pour provoquer la croissance épitaxiale de semi-conducteurs binaires,申请号FR19620900563-传众专利搜索

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发明名称	Procédé pour provoquer la croissance épitaxiale de semi-conducteurs binaires
摘要
申请公布号	FR1324819(A)	申请公布日期	1963.04.19
申请号	FR19620900563	申请日期	1962.06.13
申请人	WESTERN ELECTRIC COMPANY, INCORPORATED	发明人
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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