发明名称 ETCHING APPARATUS AND METHOD FOR FABRICATING ALTERNATING PHASE SHIFT MASK USING THE SAME
摘要 An etching apparatus includes: an etching space including a chamber; a chuck in the chamber and on which a transparent object to be etched can be loaded; a light source configured to irradiate light onto the object to be etched in order to detect a degree of etching of the object to be etched; and a detector configured to detect an intensity of the light having transmitted through the object to be etched after being emitted from the light source.
申请公布号 US2011159415(A1) 申请公布日期 2011.06.30
申请号 US20100979520 申请日期 2010.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JO SANG JIN
分类号 G03F1/00;C23F1/08 主分类号 G03F1/00
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