| 摘要 |
A semiconductor device is provided which can further suppress the leakage of a magnetic field in a magnetoresistive element, and which can further improve the performance of the semiconductor device. A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over a main surface of the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the other main surface opposite to one main surface of the free layer opposed to the tunneling insulating film. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer included in the magnetoresistive element is a layer which is disposed over one main surface of the lower electrode, and whose magnetization direction is fixed. The tunneling insulating film is disposed over the other main surface opposite to one main surface of the fixed layer opposed to the lower electrode. The free layer is a layer which is disposed over the other main surface opposite to one main surface of the tunneling insulating film opposed to the fixed layer, and whose magnetization direction is variable. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer in the direction intersecting the lamination direction of the lower electrode, the fixed layer 35, the tunneling insulating film 38, the free layer, and the upper electrode.
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