| 发明名称 |
Multi-gate III-V quantum well structures |
| 摘要 |
Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
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| 申请公布号 |
US2011156004(A1) |
申请公布日期 |
2011.06.30 |
| 申请号 |
US20090655463 |
申请日期 |
2009.12.30 |
| 申请人 |
RADOSAVLJEVIC MARKO;SHAH UDAY;DEWEY GILBERT;MUKHERJEE NILOY;CHAU ROBERT S;KAVALIEROS JACK;PILLARISETTY RAVI;RAKSHIT TITASH;METZ MATTHEW V |
发明人 |
RADOSAVLJEVIC MARKO;SHAH UDAY;DEWEY GILBERT;MUKHERJEE NILOY;CHAU ROBERT S.;KAVALIEROS JACK;PILLARISETTY RAVI;RAKSHIT TITASH;METZ MATTHEW V. |
| 分类号 |
H01L29/775;H01L21/20;H01L21/336 |
主分类号 |
H01L29/775 |
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