发明名称 |
PREDOPED SEMICONDUCTOR MATERIAL FOR A HIGH-K METAL GATE ELECTRODE STRUCTURE OF P- AND N-CHANNEL TRANSISTORS |
摘要 |
In a process strategy for forming high-k metal gate electrode structures in an early manufacturing phase, a predoped semiconductor material may be used in order to reduce the Schottky barrier between the semiconductor material and the conductive cap material of the gate electrode structures. Due to the substantially uniform material characteristics of the predoped semiconductor material, any patterning-related non-uniformities during the complex patterning process of the gate electrode structures may be reduced. The predoped semiconductor material may be used for gate electrode structures of complementary transistors.
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申请公布号 |
US2011156153(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20100905711 |
申请日期 |
2010.10.15 |
申请人 |
BEYER SVEN;HOENTSCHEL JANDE;GRIEBENOW UWE;SCHEIPER THILO |
发明人 |
BEYER SVEN;HOENTSCHEL JANDE;GRIEBENOW UWE;SCHEIPER THILO |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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主权项 |
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地址 |
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