发明名称 |
METHOD FOR MANUFACTURING TWIN BIT STRUCTURE CELL WITH HAFNIUM OXIDE AND NANO-CRYSTALLINE SILICON LAYER |
摘要 |
A method and system for forming a non-volatile memory structure. The method provides a semiconductor substrate and forms a gate dielectric layer overlying a surface region of the semiconductor substrate. A polysilicon gate structure is formed overlying the gate dielectric layer. The method subjects the polysilicon gate structure to an oxidizing environment to cause formation of a first silicon oxide layer overlying the polysilicon gate structure and formation of a second silicon oxide layer overlying a surface region of the substrate. A hafnium oxide material is formed overlying the first and second silicon oxide layers and filling the undercut region. The hafnium oxide material has a nanocrystalline silicon material sandwiched between a first hafnium oxide layer and a second hafnium oxide layer. The hafnium oxide material is selectively etched while a portion of it is maintained in an insert region in a portion of the undercut region.
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申请公布号 |
US2011156129(A1) |
申请公布日期 |
2011.06.30 |
申请号 |
US20100978473 |
申请日期 |
2010.12.24 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
FUMITAKE MIENO |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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