发明名称 HALF-TONE MASK FOR FINE PATTERN
摘要 PURPOSE: A half-tone mask for a fine pattern is provided to embody a fine line width of a pixel by comprising supplementary half-tone pattern areas along a shading pattern line. CONSTITUTION: Shading pattern lines(110) forms transfer patterns formed on a transparent substrate. Supplementary half-tone pattern areas(120) are formed on each side of the shading pattern lines. A first supplementary pattern is placed close to the side of the shading pattern lines. A second supplementary pattern is formed on the transparent substrate. The second supplementary pattern is formed along the vertical direction of the first supplementary pattern.
申请公布号 KR20110074175(A) 申请公布日期 2011.06.30
申请号 KR20090131071 申请日期 2009.12.24
申请人 LG INNOTEK CO., LTD. 发明人 BACK, SEUNG HO
分类号 G02F1/13 主分类号 G02F1/13
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