发明名称 |
TOP DOWN TYPE HIGH TEMPERATURE EVAPORATION SOURCE FOR METAL FILM ON SUBSTRATE |
摘要 |
PURPOSE: A top-down type high temperature evaporation source for deposition of a metal film is provided to improve productivity by preventing the drooping of a substrate, on which a metal film is formed, in production of large organic devices. CONSTITUTION: A top-down type high temperature evaporation source for deposition of a metal film comprises a cylindrical top-down type crucible(20) in which a circular vent is formed in the center of the bottom. The cylindrical top-down type crucible comprises a containing crucible and a covering crucible which are integrally or separately formed. The containing crucible has a bottom-closed source storage part which has a two U-shaped cross section and a cylindrical transfer part along the central axis. The covering crucible is formed in a dome shape. A film uniformity controller is installed under the vent of the cylindrical top-down type crucible.
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申请公布号 |
KR20110074501(A) |
申请公布日期 |
2011.06.30 |
申请号 |
KR20110054809 |
申请日期 |
2011.06.07 |
申请人 |
OLEDON TECHNOLOGY INC. |
发明人 |
HWANG, CHANG HUN;KIM, SUNG SOO;KIM, TAE WAN |
分类号 |
C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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