发明名称 TOP DOWN TYPE HIGH TEMPERATURE EVAPORATION SOURCE FOR METAL FILM ON SUBSTRATE
摘要 PURPOSE: A top-down type high temperature evaporation source for deposition of a metal film is provided to improve productivity by preventing the drooping of a substrate, on which a metal film is formed, in production of large organic devices. CONSTITUTION: A top-down type high temperature evaporation source for deposition of a metal film comprises a cylindrical top-down type crucible(20) in which a circular vent is formed in the center of the bottom. The cylindrical top-down type crucible comprises a containing crucible and a covering crucible which are integrally or separately formed. The containing crucible has a bottom-closed source storage part which has a two U-shaped cross section and a cylindrical transfer part along the central axis. The covering crucible is formed in a dome shape. A film uniformity controller is installed under the vent of the cylindrical top-down type crucible.
申请公布号 KR20110074501(A) 申请公布日期 2011.06.30
申请号 KR20110054809 申请日期 2011.06.07
申请人 OLEDON TECHNOLOGY INC. 发明人 HWANG, CHANG HUN;KIM, SUNG SOO;KIM, TAE WAN
分类号 C23C14/24 主分类号 C23C14/24
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