SILICON CARBIDE SUBSTRATE

摘要

Disclosed is a silicon carbide substrate (1) that can be prevented from warping even in cases where a different material layer, which is formed from a material other than silicon carbide, is formed thereon. The silicon carbide substrate (1) comprises a base layer (10) that is formed from silicon carbide, and a plurality of SiC layers (20) that are formed from single crystal silicon carbide and aligned on the base layer (10) when viewed in plan. A gap (60) is provided between the end faces (20B) of SiC layers (20) that are adjacent to each other.