| 摘要 |
<p>PURPOSE: A method for manufacturing a phase change memory device is provided to improve a step coating property at a low temperature by repeating an insulation layer forming cycle of a multi-step. CONSTITUTION: A phase change layer pattern(107) is formed on a semiconductor substrate. A top electrode pattern(108) is formed on the phase change layer pattern. A capping layer(109) is formed by depositing an insulation layer which surrounds the phase change layer pattern and the top electrode pattern several times below a temperature to induce the phase change of the phase change layer pattern.</p> |
