| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve the light collecting efficiency by forming a light collecting lens on the upper side of a micro lens. CONSTITUTION: A semiconductor substrate includes a pixel region, a peripheral region, and a photo diode. An interlayer insulating layer is arranged on the semiconductor substrate and includes a metal wiring. A color filter layer is arranged in the pixel region of the interlayer insulating layer. A plurality of micro lenses(300) is arranged on the pixel region of the color filter layer. A light collecting lens(400) is formed in the pixel region and coves the micro lenses. A dam(350) is arranged on the interlayer insulating layer of the peripheral region. A protecting glass is arranged on the dam and the light collecting lens.
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