摘要 |
PURPOSE: A backside light receiving image sensor and a method for manufacturing the same are provided to improve the alignment characteristic of a color filter and a micro lens, based on the reflecting signal of a photo key which is protruded while a color filter aligning process. CONSTITUTION: A pixel region and a scribe lane are defined on a semiconductor substrate. A photo detecting part is formed in the pixel region of the front side of the semiconductor substrate. A photo key(150) is formed in the scribe lane of the back side of the semiconductor substrate. A color filter(190) and a micro lens are formed on a passivation layer(170) to be corresponded to the photo detecting part. A liner oxide film is formed along the backside surface profile of the semiconductor substrate including the photo key.
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