发明名称 SUBSTRATE PROCESSING DEVICE
摘要 PURPOSE: A substrate processing device is provided to prevent particles or damaged due to plasma by suppressing the plasma on a specific region. CONSTITUTION: A chamber(10) has a space to process a substrate. A substrate support(20) is rotatably installed in the chamber. A plurality of spray plates(50) are installed in a top lead to spray process gas to the substrate along a circumference direction. An electrode is connected to a selected spray plate among the spray plates and generates plasma between the selected spray plate and the substrate support. A gas spray unit includes a partition member between a selection region and a non-selection region. The spray plate in the selection region is electrically connected to the spray plate in the non-selection region.
申请公布号 KR20110072336(A) 申请公布日期 2011.06.29
申请号 KR20090129215 申请日期 2009.12.22
申请人 ATTO CO., LTD. 发明人 HAN, CHANG HEE;LEE, HO YOUNG;LEE, WOO SUNG
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址