发明名称 |
SUBSTRATE PROCESSING DEVICE |
摘要 |
PURPOSE: A substrate processing device is provided to prevent particles or damaged due to plasma by suppressing the plasma on a specific region. CONSTITUTION: A chamber(10) has a space to process a substrate. A substrate support(20) is rotatably installed in the chamber. A plurality of spray plates(50) are installed in a top lead to spray process gas to the substrate along a circumference direction. An electrode is connected to a selected spray plate among the spray plates and generates plasma between the selected spray plate and the substrate support. A gas spray unit includes a partition member between a selection region and a non-selection region. The spray plate in the selection region is electrically connected to the spray plate in the non-selection region.
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申请公布号 |
KR20110072336(A) |
申请公布日期 |
2011.06.29 |
申请号 |
KR20090129215 |
申请日期 |
2009.12.22 |
申请人 |
ATTO CO., LTD. |
发明人 |
HAN, CHANG HEE;LEE, HO YOUNG;LEE, WOO SUNG |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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