发明名称 Semiconductor device and method of manufacturing the same
摘要 <p>A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas (301) sectioned by chip areas is prepared. Next, pads (101, 102, 103, 104) to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas (301). Subsequently, the respective test areas are tested by a same probe card via the plurality of pads.</p>
申请公布号 EP2031655(A3) 申请公布日期 2011.06.29
申请号 EP20080008515 申请日期 2008.05.06
申请人 HITACHI, LTD. 发明人 MACHIDA, SHUNTARO;KOBAYASHI, TAKASHI
分类号 H01L23/58 主分类号 H01L23/58
代理机构 代理人
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