FINFET TYPE FLASH MEMORY OF HAVING BLOCKING DIELECTRIC FILMS OF VARIOUS DIFFERENT THICKNESS

摘要

PURPOSE: An FinFET type flash memory with a blocking dielectric film of a different thickness is provided to change the thickness of a blocking dielectric film arranged between a charge capturing layer and a control gate, thereby reducing the load of a process due to a step between adjacent gate structures. CONSTITUTION: A Fin channel is formed on a substrate(10). A first gate structure(100) and a second gate structure(200) are formed on the upper part and the side of the Fin channel. The first gate structure is composed of a first side gate(110) and a second side gate(120) around the Fin channel. The second gate structure is composed of a third side gate(210) and a fourth side gate(220) around the Fin channel. The third side gate and the fourth side gate are electrically connected through a second connection gate(240) on a second separation insulation film(230).