发明名称 |
Pellicle and method for fabrication thereof |
摘要 |
<p>A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film (11). The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with <100> orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle (10) comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.</p> |
申请公布号 |
EP2113809(B1) |
申请公布日期 |
2011.06.29 |
申请号 |
EP20090159299 |
申请日期 |
2009.05.04 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
AKIYAMA, SHOJI;SHINDO, TOSHIHIKO;KUBOTA, YOSHIHIRO |
分类号 |
G03F1/22;G03F1/24;G03F1/62 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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