| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to prevent a memory gate sidewall from being etched by a protective layer, thereby enhancing the profile of a memory gate. CONSTITUTION: An ONO(Oxide-Nitride-Oxide) film and A first poly silicon film are formed on a semiconductor substrate(100). A memory gate(300) is formed by performing a first etching process on the first poly silicon film. A protective layer made of polymer is formed on a sidewall of the memory gate. An ONO film pattern(200) is formed in the lower part of the memory gate. A select gate(400) is formed on the memory gate and the sidewall of the ONO film pattern.</p> |
