THERMOELECTRIC DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A thermoelectric device and a manufacturing method thereof are provided to obtain a dense sinter for a short time by rapidly raising a temperature with a discharge plasma sintering method to prevent the growth of particles. CONSTITUTION: A Ni-Mo electrode(Ni1-XMoX,0.5<=X<1) and a Ni plate are heated with a junction temperature lower than the fusing temperature of Ni and Mo. The Ni-Mo electrode and the Ni plate are bonded by pressurizing the Ni-Mo electrode and the Ni plate at a junction temperature. The assembly of the Ni-Mo electrode and the Ni plate is obtained by cooling a chamber. The Ni plate of the assembly is contacted with a thermoelectric semiconductor, is filled in a mold(110), and is set in the chamber of a discharge plasma sintering device. The Ni plate of the assembly is bonded with a thermoelectric semiconductor by pressurizing the thermoelectric semiconductor and the assembly at the junction temperature. The thermoelectric device in which the Ni plate and the thermoelectric semiconductor are bonded is obtained by cooling the chamber.