THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY SUBSTRATE USING THE THIN FILM TRANSISTOR

摘要

PURPOSE: A thin film transistor, a method for manufacturing the same, and a display board using the same are provided to improve the characteristic by preventing an oxide semiconductor layer to external light. CONSTITUTION: A protective layer(60) is formed on an oxide semiconductor layer(40) to be overlapped with the channel region of the oxide semiconductor layer. An opaque layer is formed between the oxide semiconductor layer and the protective layer. A source electrode is in contact with one side of the oxide semiconductor layer. A drain electrode(80) is in contact with another side of the oxide semiconductor layer to face to the source electrode through the channel region. A gate electrode applies electric field to the oxide semiconductor layer. A gate insulating layer is formed between the gate electrode and the oxide semiconductor layer.