| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to extend the lifespan of a semiconductor device by applying a single crystal to control the threshold voltage of the gate by improving the control ability of a gate. CONSTITUTION: In a method for forming a semiconductor device, a single crystal layer is formed on a semiconductor substrate(100) including a cell region and a peri area. A photosensitive film is spread on the single crystal layer to form a photosensitive pattern. The single crystal layer is etched through the photosensitive pattern as an etch mask to form a gate pattern. A halo ion implantation area is formed on the semiconductor substrate by performing halo ion implantation though the gate pattern as a barrier. An ion injection process is performed through the gate pattern as a barrier to form source and drain regions.</p> |
