| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to maximally suppress a noise and a dark current by applying a porous insulation layer to an interlayer insulation layer. CONSTITUTION: A first interlayer insulating layer(209) is formed on the upper side of a semiconductor substrate. A porous insulation layer(210) is formed on the upper side of the first interlayer insulation layer. A first contact plug is formed on the first interlayer insulation layer and the porous insulation layer. A metal wiring is formed on the semiconductor substrate with a first contact plug. A second interlayer insulation layer(214) is formed on the upper side of the semiconductor substrate with the metal wiring. A second contact plug is formed on the second interlayer insulation layer. A color filter layer and a micro lens are successively formed on the upper side of the semiconductor substrate with the second contact plug.
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