| 摘要 |
818,931. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Aug. 7, 1956 [Aug. 5, 1955], No. 24231/56. Class 37. An alloy junction electrode on a semi-conductor body is produced by placing a mass of impurity material of desired electrode shape on the semi-conductor and covering the marginal zone(s) of this mass with an auxiliary body of higher melting point material which adheres to the impurity material when this is molten, so that the latter maintains the desired shape during the alloying process. Figs. 1 and 2 show a germanium or silicon body 1 bearing a circular disc 2 of impurity material such as indium, the marginal zone of which is covered by an annular body 3 of material such as molybdenum, tantalum, tungsten or iron. Alternatively the electrode may be rectangular or elliptical, or be in the shape of an annulus, the inner and outer marginal zones each being covered by an annular auxiliary body, with, for example, further auxiliary bridge pieces linking the inner and outer annuli. An intermediate coating of gold, tin, and tin-indium alloy may be provided between the electrode and high melting point body to assist adhesion. The body may be affixed to the electrode material prior to the alloy heating step, or may be shaped to interlock with the electrode material on assembly. The semi-conductor material may alternatively consist of a binary A III , Bv compound. The process may be used to provide a rectifier or a transistor. |
