Fabrication process of a non-planar microelectronic device

摘要

The method involves applying a pressure difference on either side of a silicon dioxide layer including a silicon detection circuit (16) to cause slumping of the circuit into a concave cavity to cause the circuit to assume shape of the cavity. The cavity is filled with a material i.e. resin, to be selectively removed relative to a silicon substrate and the circuit so as to fit or form the circuit on the cavity and to form a feed-through to access the cavity. The material is selectively etched to remove the material to realize superposition of the circuit and the cavity.