THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the carrier mobility of an interfacial area, thereby increasing the field effect mobility of the thin film transistor. CONSTITUTION: A gate insulating layer(104) covers a first wiring layer. A first semiconductor layer is overlapped with the entire surface of a first wiring layer. A second semiconductor layer(108) contacts the first semiconductor layer and has lower carrier mobility than the first semiconductor layer. A dopant semiconductor layer(110) is adjacent to the second semiconductor layer. A sidewall insulating layer covers at least a side of the first semiconductor layer. A second wiring layer contacts the dopant semiconductor layer.