| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to improve the reliability by minimizing the generation of polymer which is the byproduct of a select gate forming process. CONSTITUTION: A first memory gate(301) and a second memory gate(302) are formed on a semiconductor substrate. An oxide film and a poly silicon film are formed on the front side of the semiconductor substrate. A first etching process is implemented to the poly silicon film to form poly silicon patterns on oxide films on both sidewalls of the first and the second memory gates. The poly silicon pattern between the first and the second memory gates is eliminated to form a select gate composed of a poly silicon pattern on either of side walls of the first and the second memory gates.</p> |
