发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a detection element simply structured by installing an electrode and wiring in a semiconductor with high density for converting an incident detection object into electricity. <P>SOLUTION: This detection element is configured to convert a detection object to be made incident to an incident face into electricity. The element is provided with a first face on which a plurality of first electrodes are installed so as to be extended from the first side to the second side, and a second face at the opposite side of the first face where a plurality of second electrodes are installed, and structured so that a plurality of wiring extended from the first side to the second side can be installed on the plurality of first electrodes, and that the adjacent wiring can be isolated by an insulating structural body, and fixed on the first electrodes. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP4711288(B2) 申请公布日期 2011.06.29
申请号 JP20050143176 申请日期 2005.05.16
申请人 发明人
分类号 H01L31/09;G01T1/24 主分类号 H01L31/09
代理机构 代理人
主权项
地址
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