| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof are provided to form a plurality of through holes which is filled with oxide according to the focal distance of each unit pixel, thereby minimizing light loss. CONSTITUTION: A semiconductor substrate(100) includes a photo diode. An interlayer dielectric layer(210) includes a metal wire on the semiconductor substrate. A color filter(400) is formed on the interlayer dielectric layer to correspond to the photo diode. A micro lens(500) is formed on the color filter to make the color filter correspond to the photo diode. A waveguide(310) is formed between the photo diode and the color filter.
|
