发明名称 |
Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same |
摘要 |
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition. |
申请公布号 |
US7968000(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20090432437 |
申请日期 |
2009.04.29 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD.;DONGWOO FINE-CHEM CO., LTD. |
发明人 |
CHOI YOUNG-JOO;KIM BONG-KYUN;LEE BYEONG-JIN;CHOUNG JONG-HYUN;HONG SUN-YOUNG;SUH NAM-SEOK;PARK HONG-SICK;KIM KY-SUB;LEE SEUNG-YONG;LEE JOON-WOO;PARK YOUNG-CHUL;JIN YOUNG-JUN;YANG SEUNG-JAE;LEE HYUN-KYU;JANG SANG-HOON;LIM MIN-KI |
分类号 |
C09K13/00;C03C15/00 |
主分类号 |
C09K13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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