发明名称 Systems and methods for positive and negative feedback of cascode transistors for a power amplifier
摘要 Systems and methods are provided for positive and negative feedback of cascode transistors for a power amplifier. The systems and methods may include a first cascode stage comprising a first common-source device and a first common-gate device; a second cascode stage comprising a second common-source device and a second common-gate device; a first degenerative element or block provided for the first common-source device; a second degenerative element or block provided for the second common-source device; a first positive feedback block or element that connects a first gate of the first common-source device with a second drain of the second common-source device; and a second positive feedback block or element that connects a second gate of the second common-source device with a first drain of the first common-source device.
申请公布号 US7969246(B1) 申请公布日期 2011.06.28
申请号 US20100723038 申请日期 2010.03.12
申请人 SAMSUNG ELECTRO-MECHANICS COMPANY 发明人 AN KYU HWAN;PARK YUNSEO;LEE CHANG-HO
分类号 H03F3/04 主分类号 H03F3/04
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