| 摘要 |
A partial ion implantation apparatus and method are provided. The partial ion implantation apparatus includes an ion beam generator, a wafer chuck, and a plurality of atom-vibrating devices. The ion beam generator is configured to generate an ion beam. The wafer chuck is disposed to support a wafer into which the ion beam is implanted. The atom-vibrating devices are configured to vibrate silicon atoms in the wafer.
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