发明名称 Near field exposure mask, method of forming resist pattern using the mask, and method of producing device
摘要 Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
申请公布号 US7968256(B2) 申请公布日期 2011.06.28
申请号 US20070376426 申请日期 2007.10.05
申请人 CANON KABUSHIKI KAISHA 发明人 ITO TOSHIKI;MIZUTANI NATSUHIKO;TERAO AKIRA
分类号 G03F1/52;G03F1/54;G03F7/00;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F1/52
代理机构 代理人
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