发明名称 |
Near field exposure mask, method of forming resist pattern using the mask, and method of producing device |
摘要 |
Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2 formed above the transparent mask matrix l0 and containing silicon; a reflective layer l1 formed between the transparent mask matrix l0 and the light shielding layer l2; and an opening pattern provided in the reflective layer l1 and the light shielding layer l2 and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0 and the reflective layer l1 is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.
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申请公布号 |
US7968256(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20070376426 |
申请日期 |
2007.10.05 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ITO TOSHIKI;MIZUTANI NATSUHIKO;TERAO AKIRA |
分类号 |
G03F1/52;G03F1/54;G03F7/00;G03F7/038;G03F7/039;H01L21/027 |
主分类号 |
G03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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