发明名称 Semiconductor storage device and test method therefor
摘要 Disclosed is a semiconductor device including a BIST provided with a plurality of scan FFs (flip-flops), a data address signal generation circuit unit which respectively generates a data signal and an address signal based on a set value of a scan FF, WEB generation circuit unit which generates a signal WEB which controls writing to and reading data from the semiconductor memory based on an scan FF value, and a test signal control circuit unit which controls the data address signal generation circuit unit and the WEB generation circuit unit, based on a received control signal, controls selectors, and selects and controls, as data and address signals to be supplied to the memory, data signal and address signals from the data address signal generation circuit unit or data and address signals via a user defined circuit.
申请公布号 US7971116(B2) 申请公布日期 2011.06.28
申请号 US20080174656 申请日期 2008.07.17
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SANNOMIYA TAKAYOSHI
分类号 G01R31/28 主分类号 G01R31/28
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