发明名称 |
Low capacitance over-voltage protection thyristor device |
摘要 |
An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.
|
申请公布号 |
US7968907(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20080314375 |
申请日期 |
2008.12.09 |
申请人 |
PAN JIT AMERICAS, INC. |
发明人 |
TEMPLETON GEORGE;WASHBURN JAMES |
分类号 |
H01L21/70;H01L;H01L27/02;H01L29/747 |
主分类号 |
H01L21/70 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|