发明名称 Low capacitance over-voltage protection thyristor device
摘要 An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.
申请公布号 US7968907(B2) 申请公布日期 2011.06.28
申请号 US20080314375 申请日期 2008.12.09
申请人 PAN JIT AMERICAS, INC. 发明人 TEMPLETON GEORGE;WASHBURN JAMES
分类号 H01L21/70;H01L;H01L27/02;H01L29/747 主分类号 H01L21/70
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