发明名称 Light emitting device
摘要 A light emitting device has a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a narrow electrode having a current feeding part provided on a region of a part above of the first semiconductor layer for supplying an electric current from outside to the semiconductor multilayer structure, and a narrow electrode provided adjacent to the current feeding part for reflecting a light emitted from the active layer, and a surface center electrode part electrically connected to the narrow electrode, and provided above the first semiconductor layer via a transmitting layer for transmitting the light.
申请公布号 US7968903(B2) 申请公布日期 2011.06.28
申请号 US20090382598 申请日期 2009.03.19
申请人 HITACHI CABLE, LTD. 发明人 UNNO TSUNEHIRO
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
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