| 摘要 |
A bonding wire for a semiconductor device has a core wire and a periphery comprising a conductive metal mainly composed of an element common to both and/or an alloy or alloys of said metal and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer composed of the elements constituting the core wire and the periphery and a bonding wire for a semiconductor device characterized by having a core wire comprising a first conductive metal or an alloy mainly composed of the first conductive metal, a periphery comprising a second conductive metal different from the first conductive metal of the core wire or an alloy mainly composed of the second conductive metal, and, between the core wire and the periphery, a diffusion layer or an intermetallic compound layer and a method of producing the same. |
