| 摘要 |
Embodiments of a high-frequency millimeter-wave amplifier are generally described herein. The high-frequency millimeter-wave amplifier may be constructed on a substrate to operate at a frequency of at least 75 GHz. In some embodiments, the millimeter-wave amplifier may include at least first, second, third and fourth amplifier stages coupled in series. A single drain bias bond pad provided on the substrate to provide a drain bias voltage to the drains of the first, second, third and fourth amplifier stages. Drain bias lines may be electrically coupled to the single drain bias bond pad and extend at least partially alongside and between some of the amplifier stages. A signal path through the second amplifier stage extends in a direction opposite of signal paths through the first and third amplifier stages. In some embodiments, a 95 GHz amplifier is provided and configured occupy an area on the substrate of no greater than approximately four square millimeters.
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