发明名称 Apparatus and method for isolating integrated circuit components using deep trench isolation and shallow trench isolation
摘要 An isolation trench structure includes both a deep trench isolation (DTI) trench and a shallow trench isolation (STI) trench. The DTI trench can be formed by etching a deeper, narrower trench in a substrate and filling the deeper trench with one or more materials (such as an oxide). The STI trench can be formed by etching a shallower, wider trench in the substrate and filling the shallower trench with one or more materials (such as an oxide). The STI trench surrounds a portion of the DTI trench, such as by completely encircling an upper portion of the DTI trench. The DTI and STI trenches are filled during different operations, and the DTI and STI trenches can be filled with the same material(s) or with different material(s).
申请公布号 US7968418(B1) 申请公布日期 2011.06.28
申请号 US20070786002 申请日期 2007.04.10
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 LABONTE ANDRE P.;THIBEAULT TODD P.
分类号 H01L21/331 主分类号 H01L21/331
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