| 摘要 |
According to an exemplary embodiment, a method for integrating a high speed bipolar transistor in a high speed transistor region of a substrate with a high voltage transistor in a high voltage transistor region of the substrate includes forming a buried subcollector in the high speed transistor region of the substrate. The method further includes forming a first high energy implant region in the high voltage transistor region of the substrate, where the first high energy implant region extends to a depth greater than a depth of a peak dopant concentration of the buried subcollector, thereby increasing a collector-to-emitter breakdown voltage of the high voltage transistor. The collector-to-emitter breakdown voltage of the high voltage transistor can be greater than approximately 5.0 volts. The high speed bipolar transistor can have a cutoff frequency of greater approximately 200.0 GHz.
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