发明名称 |
Phase change memory devices and read methods using elapsed time-based read voltages |
摘要 |
A variable resistance memory device includes a memory cell connected to a bit line and a clamp circuit configured to provide either a first read voltage or a second read voltage to the bit line according to an elapsed time from a write operation of the memory cell. Related methods are also described.
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申请公布号 |
US7969798(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20090431292 |
申请日期 |
2009.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG YOUNG-NAM;KANG DAE-HWAN;UM CHANG-YONG |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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