发明名称 |
Semiconductor device and manufacturing method of the semiconductor device |
摘要 |
A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.
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申请公布号 |
US7968396(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20090591648 |
申请日期 |
2009.11.25 |
申请人 |
SEIKO EPSON CORPORATION;RENESAS TECHNOLOGY CORPORATION |
发明人 |
WATANABE YUKIMUNE;MIGITA SHINJI;MISE NOBUYUKI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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