发明名称 |
Group-III nitride light-emitting device |
摘要 |
A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≰X<1, where X is a strained composition). The basal plane of the gallium nitride based semiconductor region is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane of a hexagonal system group III nitride. The basal plane in this range is a semipolar plane.
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申请公布号 |
US7968864(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20090390036 |
申请日期 |
2009.02.20 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
AKITA KATSUSHI;KASAI HITOSHI;KYONO TAKASHI;MOTOKI KENSAKU |
分类号 |
H01L29/74;B82Y20/00;H01L31/111;H01L33/06;H01L33/32 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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