发明名称 Positive resist composition and method of forming resist pattern
摘要 A positive resist composition used to form a second resist film in a method of forming a positive resist pattern, including: applying a positive resist composition on the substrate on which a first resist pattern formed of a first resist film is formed to form a second resist film; and selectively exposing the second resist film and alkali-developing the second resist film to form a resist pattern; wherein the positive resist composition includes a resin component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2), which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure, and an organic solvent (S) which does not dissolve the first resist film, and the resin component (A) and the acid-generator component (B) are dissolved in the organic solvent (S).
申请公布号 US7968276(B2) 申请公布日期 2011.06.28
申请号 US20090351759 申请日期 2009.01.09
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 TAKESHITA MASARU
分类号 G03F7/20;G03F7/039;G03F7/30 主分类号 G03F7/20
代理机构 代理人
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