发明名称 |
Methods for incorporating high dielectric materials for enhanced SRAM operation and structures produced thereby |
摘要 |
Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught.
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申请公布号 |
US7968450(B2) |
申请公布日期 |
2011.06.28 |
申请号 |
US20090543999 |
申请日期 |
2009.08.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BHAVNAGARWALA AZEEZ J.;KOSONOCKY STEPHEN V.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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