| 摘要 |
Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a first device, a silicon epitaxial layer formed on and/or over the first device, a second device formed on and/or over the silicon epitaxial layer, and a connection via formed through the silicon epitaxial layer, which may electrically interconnect the first device and the second device. According to embodiments, a method for fabricating a semiconductor device may include forming a first device, forming a silicon epitaxial layer on and/or over the first device, forming a connection via through the silicon epitaxial layer, and forming a second device on and/or over the silicon epitaxial layer such that the second device may be electrically connected to the connection via.
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