| 发明名称 |
NANO-SEMICONDUCTOR GAS SENSOR |
| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: sensor has a semiconductor base and a substrate. The semiconductor base is made from a nano-sized film of cadmium telluride doped with zinc selenide. The electrode platform of a piezoelectric crystal resonator serves as the substrate. ^ EFFECT: high sensitivity of the sensor and its manufacturability. ^ 1 dwg |
| 申请公布号 |
RU2422811(C1) |
申请公布日期 |
2011.06.27 |
| 申请号 |
RU20100104349 |
申请日期 |
2010.02.08 |
| 申请人 |
GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "OMSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" |
发明人 |
KIROVSKAJA IRAIDA ALEKSEEVNA;PODGORNYJ STANISLAV OLEGOVICH |
| 分类号 |
B82B1/00;G01N27/22 |
主分类号 |
B82B1/00 |
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