AMORPHOUS OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An amorphous oxide thin film transistor and a manufacturing method thereof are provided to improve the uniformity of a device property by forming an amorphous oxide semiconductor by adding an acceptor dopant to a zinc oxide based oxide semiconductor. CONSTITUTION: A gate electrode(121) is formed on a substrate(110). A gate insulation layer(115) is formed on the gate electrode. An active layer(124) made of the amorphous oxide semiconductor is formed on the gate insulation layer. The amorphous oxide semiconductor is formed by adding an acceptor dopant to a zinc oxide based oxide semiconductor. A source electrode(122) and a drain electrode(123) are electrically connected to a preset area of the active layer.